Chinese translation for "buried oxide"
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- 隐埋氧化物
Related Translations:
- Example Sentences:
| 1. | Buried oxide layer ( box ) - the layer that insulates between the two wafers
氧化埋层( box ) -在两个晶圆片间的绝缘层。 | | 2. | Buried oxide layer ( box ) - the layer that insulates between the two wafers
氧化埋层( box ) -在两的间片圆晶个绝缘层。 | | 3. | The electrical parameters of buried oxide and interface state in soi structures influence the performance , reliability and the radiation hardness of devices fabricated in the superficial silicon film
完成了存储阵列，控制电路，外围电路的时序设计，原理图设计，版图设计，并且通过了drc ， lvs检查。 | | 4. | Influences of the parameters on device performance such as thickness of strained si , ge content , channel doping and thickness of buried oxide are discussed based on given models . the models could be very helpful for device design
根据所建立的模型,针对硅膜厚度、 ge组分、掺杂浓度和埋氧层厚度等参量对薄膜全耗尽型strained - soimosfet器件性能的影响进行详细讨论,为器件结构设计提供了理论基础。 | | 5. | Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
采用数值模拟分析方法,深入研究了漂移区长度、漂移区浓度、埋氧层厚度、顶层硅厚度、氧化层电荷以及衬底偏压对resurf效应、击穿电压和导通电阻的影响。 | | 6. | In the present work , water plasma ion implantation , instead of the conventional oxygen plasma ion implantation , has been employed to fabricate soi materials . the masses of the three dominant ion species in the water vapor plasma , h2o + , ho + , and o + , are very close to each other , which overcome the problem of co - existence of o and 02 in oxygen plasma source . the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much , which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
本论文创造性地采用水等离子体离子注入方式代替传统的氧离子注入方式来制备soi结构材料，由于水等离子体中的三种离子h _ 2o ~ + 、 ho ~ +和o ~ +质量数相差很小，克服了氧等离子体中因o _ 2 ~ +和o ~ +质量数相差大而引起的氧在硅中的分布弥散，使注入硅后的氧射程分布相对集中，比较容易退火后形成soi结构材料。 | | 7. | Charge qs was located near the interface of silicon and oxide . with more charge , the field of buried oxide was improved up to the critical breakdown field basis on entirely continuity of electric displacement vector , and then the vertical breakdown voltage was raised . the comparisons between analytical and simulative results proved its availability of this model to interpret the vertical blocking mechanism
该模型认为，将界面电荷qs引入i层si / sio2的si界面，根据电位移矢量的全连续性，界面电荷qs越多，使i层内电场增加，直至sio2的临界电场，从而提高纵向击穿电压vb . v ，很好得解决了器件的纵向耐压问题。 | | 8. | After structure design aimed to high transconductance , parameters of device structure are modified in detail . the simulation results of soi nmos with strained si channel show great enhancements in drain current , effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet . the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次,根据器件参量对阈值电压和输出特性的影响,以提高器件的跨导和电流驱动能力为目的设计了strained - soimosfet器件结构,详细分析栅极类型和栅氧化层厚度、应变硅层厚度、 ge组分、埋氧层深度和厚度以及掺杂浓度的取值,对器件进行优化设计。 |
- Similar Words：
- "buried or concealed object" Chinese translation, "buried ore" Chinese translation, "buried ore body" Chinese translation, "buried orebody" Chinese translation, "buried outcrop" Chinese translation, "buried oxide isolation process" Chinese translation, "buried oxide metal oxide semiconductor" Chinese translation, "buried peat" Chinese translation, "buried penis" Chinese translation, "buried penstock" Chinese translation
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